Structural and electrical properties of ferroelectric bismuth titanate thin films prepared by the sol gel method

Abstract

Crystalline bismuth titanate films were fabricated using a modified sol gel method. The process was simplified using stock titanium and bismuth solutions. Films were fabricated using rapid thermal processing with a ramp rate of 100 °C/s to 700 °C for 30 s. The average grain size of films was 175 nm. A dielectric constant in the typical range of 220 and tanδ of 0.01 were measured. P- E hysteresis loops were observed with the ferroelectric properties of P s = 22 μC/cm 2, P r = 10 μC/cm 2 and the coercive force E c = 165 kV/cm. The leakage current density was of the order of 10 nA/cm 2 at 60 kV/cm. An almost flat C- V characteristic and a charge storage density of 42 fC/μm 2 at 220 kV/cm were measured.