Abstract
Low temperature growth of homoepitaxial film on Si substrate cleaned in-situ by ECR hydrogen plasma
Published Version
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https://doi.org/10.1023/a:1024623804920
Copy DOIJournal: Journal of Materials Science Letters | Publication Date: Jan 1, 2003 |
Citations: 2 |
Low temperature growth of homoepitaxial film on Si substrate cleaned in-situ by ECR hydrogen plasma
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