Abstract
Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
https://doi.org/10.1007/s10855-005-4525-5
Journal: Journal of Materials Science Letters | Publication Date: Sep 7, 2005 |
Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers
Join us for a 30 min session where you can share your feedback and ask us any queries you have