Low-temperature, direct synthesis of β-SiC by metal vapor vacuum arc ion source implantation

Abstract

Crystalline β-SiC surface layers with strong (111) preferred orientation were synthesized by direct ion implantation into Si(111) substrates at a low temperature of 400°C using a metal vapor vacuum arc ion source. Both X-ray diffraction and Fourier transform infrared spectroscopy reveal an augment in the amount of β-SiC with increasing implantation doses at 400°C. Scanning electron microscopy shows the formation of an almost continuous SiC surface layer after implantation at 400°C with a dose of 7×10 17/cm 2. The full width at half maximum of the X-ray rocking curve of β-SiC(111) was measured to be 1.4° for the sample implanted at a dose of 2×10 17/cm 2 at 700°C, revealing a good alignment of β-SiC with the Si matrix.