Abstract
High-current Zr ion implantation technique was employed to synthesize Zr-silicide layers on Si wafers, using a metal vapor vacuum arc (MEVVA) ion source. The implantation was conducted under an extracted voltage of 45 kV, with various ion beam current densities from 25 to 127 μA/cm 2 and to ion doses ranging from 8 × 10 16 to 5 × 10 17 ions/cm 2. It was found that implantation with a current density of 76 μA/cm 2 to a dose of 5 × 10 17 ions/cm 2 could directly synthesize an equilibrium C49-ZrSi 2 layer on Si surface with neither external heating nor post-annealing and that the sheet resistance of the silicide layer so obtained was of 19 Ω/□, implying the layer was of good quality. The formation mechanism of the ZrSi 2 phase was discussed in terms of the temperature rise and irradiation parameters in the process of implantation.
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