Abstract
The WSix bilayer gate structure was developed to provide a low-resistivity metallization for GaAs large-scale integrated circuits (LSIs). By the use of 0.1 μm WSi0.4 and 0.4 μm W, 18 μ Ω cm average resistivity could be obtained while maintaining low stress and stable Schottky-barrier characteristics. This resistivity is one order of magnitude lower than that for the conventional WSix single layer. High-performance field-effect transistor characteristics were also confirmed, indicating that this bilayer gate technology is promising for realizing high-speed GaAs LSIs.
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