Abstract
Low frequency noise spectroscopy (LFNS) is a tool, complementary to other methods, such as deep level transient spectroscopy, to characterize traps in semiconductor devices. LFNS method was described, illustrated and applied to HgCdTe high operating temperature infrared detectors. The fluctuation model which connects generation- recombination process (Lorentzians) with trap level in doped semiconductor was briefly introduced. Several trap levels were obtained for detectors with different band gaps (Eg in the range 219 meV to 320 meV at 300 K). One of the trap levels Et ≈140 meV, is common for almost all examined specimens. This level, which lies in the middle of the band gap, is the main source of generation-recombination noise observed in examined HgCdTe HOT detectors.
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