Abstract
The noise spectra for n-channel, depletion-mode MOSFETs fabricated in 6H-SiC material were measured from 1-10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> Hz at room temperature. Devices were biased in the linear regime, where the noise spectra was found to be dependent upon the drain-to-source bias current density. At a drain-to-source current of 50 μA for MOSFETs with a W/L of 400 μm/4 μm, the measured drain-to-source noise power spectral density was found to be A/(f/sup /spl lambda//), with A being 2.6×10/sup -12/ V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and /spl lambda/ being between 0.73 and 0.85, indicating a nonuniform spatial trap density skewed towards the oxide-semiconductor interface. The measured Hooge parameter (/spl alpha//sub H/) was 2×10/sup -5/. This letter represents the first reported noise characterization of 6H-SiC MOSFET's.
Published Version
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