1/f noise in n-channel MOSFETs at high temperatures

Abstract

Low frequency noise in MOSFETs continues to be a very active area of research, especially as devices are shrunk to smaller dimensions. However, most of these researches on low frequency noise in MOSFETs are either at room temperature, or at low temperatures. The purpose of this paper is to present detailed low frequency nosie measurement results, modeling and theoretical analysis in n‐channel MOSFETs at temperatures from 298 K and 423 K operating from linear to saturation region. The detailed results are from several devices of channel lengths 1.2 and 1.7 μm. The operating conditions of the devices were varied from linear to saturation mode in which the gate voltage is fixed at 2.5 V and the drain voltage is varied from 0.1 to 4 V. Results of the gate input refered noise spectrum densities SVG in the frequency range of 3 Hz to 100 Hz for 1.2 μm device and of 3 Hz to 100 kHz for 1.7 μm device were proportional to 1/fβ with β close to 1. For fixed biasing conditions, SID(f) increases with temperature for th...