Abstract
E-Mode AlN/GaN HEMTs on Si With 80.4% PAE at 3.6 GHz for Low-Supply-Voltage RF Power Applications
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
https://doi.org/10.1109/led.2024.3495672
Copy DOIJournal: IEEE Electron Device Letters | Publication Date: Jan 1, 2025 |
E-Mode AlN/GaN HEMTs on Si With 80.4% PAE at 3.6 GHz for Low-Supply-Voltage RF Power Applications
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.