Low concentration diffusion in silicon under sealed tube conditions

Abstract

Boron and phosphorus were diffused into (111) C. Z. silicon under intrinsic vacuum sealed tube conditions. It has been observed that the low concentration migration of dopants from the vapor phase into the bulk solid is appreciably affected by a surface rate limitation process. Consequently, at four temperatures between 1100 and 1250°C extensive diffusion experiments were performed to explore the nature of the surface barrier rate constant. Diffusion profiles were processed to produce surface induced intrinsic diffusivities. Thermodynamics and kinetics of the surface barrier and thus induced diffusion processes have been analyzed for both silicon and germanium.