Local disordering in epitaxially strained CoAl films grown on GaAs (001)

Abstract

Local disordering has been analyzed in ordered intermetallic CoAl films epitaxially grown on GaAs(001) substrates by molecular beam epitaxy. Transmission electron microscopy investigations demonstrate the appearance of the bcc phase in the CoAl epilayer, which is the disordered version of the B2 crystal lattice type. Variations in the growth temperature between 100 and 300 °C reveal that the degree of thermal disordering and the volume fraction of the disordered bcc phase increase with increasing temperature. Interface reactions were observed in the sample fabricated at 300 °C resulting in the formation of CoAs precipitates at the interface. These precipitates contribute to the plastic relaxation of the 1.2% lattice mismatch between the CoAl film and the GaAs substrate affecting the strain-induced order–disorder transition. The impact of disordering is discussed in connection to the high diffusivity of vacancies and Co atoms existing in the intermetallic alloy.