Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

D Benyahia,J Boguski,A Rogalski,J Piotrowski,K Michalczewski,P Martyniuk,A Kębłowski,Ł Kubiszyn

doi:10.1186/s11671-018-2612-4

D Benyahia, J Boguski + Show 6 more

Open Access

https://doi.org/10.1186/s11671-018-2612-4

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Abstract

In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate. The huge lattice mismatch between the T2SL and GaAs substrate is reduced by the growth of GaSb buffer layer based on interfacial misfit array (IMF) technique. In order to compensate the strain in the InAs/GaSb T2SL, we utilized a special shutters sequence to get InSb-like and GaAs-like interfaces. It is found that the MWIR InAs/GaSb T2SL exhibits a p- and n-type conduction at low and high temperatures, respectively. Interestingly, the conduction change temperature is observed to be dependent on the growth temperature. On the other hand, LWIR T2SL conduction is dominated only by electrons. It is important to note that the dominant scattering mechanism in LWIR T2SL at low temperatures is the interface roughness scattering mechanism.

Highlights

Since InAs/GaSb Type-II superlattice (T2SL) has been conceptualized by Sai-Halasz et al [1] in 1977, great attentions have been paid in the investigation of this semiconductor material
Photodetectors based on this T2SL present theoretically higher potential over mercury cadmium telluride (HgCdTe) and the state-of-the-art infrared material systems for the generation of infrared (IR) applications [2, 3]
We investigate the in-plane transport properties of 10 ML InAs/10 ML GaSb and 24 ML InAs/7 ML GaSb T2SLs dedicated for the detection in Midwave infrared (MWIR) and longwave infrared (LWIR) regions, respectively, grown on semi-insulating GaAs (001) substrates

Summary

Introduction

Since InAs/GaSb T2SL has been conceptualized by Sai-Halasz et al [1] in 1977, great attentions have been paid in the investigation of this semiconductor material. InAs and GaSb materials grown using molecular beam epitaxy (MBE) are residually n- and p-type, respectively [17, 18]. We investigate the in-plane transport properties of 10 ML InAs/10 ML GaSb and 24 ML InAs/7 ML GaSb T2SLs dedicated for the detection in MWIR and LWIR regions, respectively, grown on semi-insulating GaAs (001) substrates.

Results

Conclusion