Year-end Sale % OFF 
Abstract
CdTe films have been grown on (001) GaAs substrates by molecular beam epitaxy in a wide range of growth temperature. X-ray double crystal rocking curve has been used to analyze the quality and orientation of the epitaxial films. Our experiments prove that the growth temperature has a great effect on the quality and orientation of the epitaxial CdTe films: Tsub<300 °C, CdTe (111)∥GaAs (001); Tsub≳300 °C, CdTe (001)∥GaAs (001). An explanation is given for this result by considering the lattice mismatch and interface energy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
