Liquid phase epitaxial growth of lattice-matched GaP-Ga 0.5Al 0.5P-GaP layer under controlled phosphorus vapor pressure and reduced oxygen contamination

Abstract

The influence of residual oxygen in the ambient gas and the effect of additional phosphorus vapor pressure during liquid phase epitaxial (LPE) growth are investigated on GaP LPE layers. The emission intensity of photoluminescence spectra due to de levels decreases drastically in the samples grown under an oxygen concentration of less than ≈0.1 ppm and under the phospho vapor pressure of about 0.4 Torr. The LPE growth of lattice-matched GaP-GaAlP-GaP heteroepitaxial layer has been studi The lattice mismatch of the layer can be reduced by adding a proper amount of InP, about 1.2 mol%, to the GaP layer. The pits at the interface of lattice-matched GaP-GaAlP heteroepitaxial layer are drastically reduced.