Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs 0.69P 0.31 substrates with application to visible light-emitting diodes

Abstract

Good-quality In 0.37Ga 0.63P and In 0.2Ga 0.8As 0.27P 0.73 layers lattice-matched to GaAs 0.69P 0.31 epitaxial substrates were grown by liquid-phase epitaxy using a supercooling technique. By selection of an optimum growth condition, we can obtain the undoped layer with a low electron concentration of 3×10 16 cm −3 for In 0.37Ga 0.63P and 2×10 16 cm −3 for In 0.2Ga 0.8As 0.27P 0.73. Photoluminescence (PL) of the undoped, Te- and Zn-doped In 0.37Ga 0.63P and In 0.2Ga 0.8As 0.27P 0.73 layers is described in detail. The emission peaks of 300 and 10 K PL spectra for In 0.37Ga 0.63P and In 0.2Ga 0.8As 0.27P 0.73 are 590 and 568 nm and 639 and 615 nm, respectively. The visible light-emitting diodes (LEDs) employing In 0.37Ga 0.63P/In 0.2Ga 0.8As 0.27P 0.73/In 0.37Ga 0.63P double heterostructure grown on GaAs 0.69P 0.31 substrates were fabricated. The LEDs exhibit a forward-bias turn-on voltage of 1.6–1.7 V, an ideality factor of ∼2.0, an emission wavelength of ∼670 nm and an external quantum efficiency of 0.20% at 60 mA.