Linearity and analog performance analysis in GSDG-MOSFET with gate and channel engineering

Abstract

Non-linearity performance of the devices is exhibit serious distortions which generate unwanted noise signal with different frequencies. These unwanted signals will interfere or change the desired output in analog and RF circuit application. So, the important reliability issue is to investigate the linearity and analog performance at transistor level. In this paper, a gate stack double gate (GS-DG) metal oxide semiconductor field effect transistor (MOSFET) with gate and channel engineering are analyzed. A comparison is made between various performance metrics among single material (SM) GS-DG, dual material (DM) GS-DG, and dual material single halo (DM-SH) GS-DG MOSFETs using Sentaurus device simulator. The major figures of merit (FOMs) studied are transconductance generation factor (TGF), early voltage (VEA), intrinsic gain (AV), transconductance coefficients (gm1, gm2, gm3), second order voltage intercept point (VIP2), third order voltage intercept point (VIP3), third order input intercept point (IIP3) and 1-dB compression point for the n-MOSFET. The DM-DG devices with high-k gate stack are found to have significantly better performances as compared to SM counterpart, which establishing better reliability for analog and RF circuit application.