Abstract
This work presents the potential benefits of Dual Material Gate and Lateral Asymmetric Channel on high-k gate stack double gate (GS-DG) metal oxide semiconductor field effect transistor (MOSFET). This study is a comparison between single material (SM), dual material (DM), and dual material single halo (DM-SH) for GS-DG MOSFETs. The key idea behind this investigation is to provide a physical explanation for the improved performance exhibited by different device design guidelines. The DM devices are found to be significantly better performance as compare to their SM counterparts as they show higher drive current with same threshold voltage. We can say theses devices are more immune to Short Channel Effects (SCEs) at nanoscale regime.
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