Abstract
We report on the determination of the linear electro-optic (LEO) reflectance modulated spectra of GaAs (101). LEO spectra were obtained from photoreflectance (PR) measurements. Experiments were carried out in an energy range around the E 1 and E 1+Δ 1 interband transitions. Two samples were employed, an undoped homepitaxial GaAs and a GaAs bulk crystal doped with Te donors in the low 10 17/cm 3 range. We show that, although LEO spectra amplitudes for the two samples differ for one order of magnitude, their line shape is essentially the same. We further report on reflectance-difference (RD) measurements aimed to obtain LEO spectra. We employed the same GaAs samples for, both, PR and RD measurements in order to contrast the information provided by these two techniques.
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