Abstract
We report the millisecond time-resolved reflectance difference (RD) measurements during short-pulse supersonic nozzle beam epitaxy of GaAs using trimethylgallium (TMG) and arsine (AsH3). A rapid rise of RD signal upon the injection of TMG short pulse was observed, and was assigned due to the density change of As dimers on the growing surface. With changes of the TMG pulse width and the substrate temperature, the corresponding changes of the rise time of the RD signal were observed. It is concluded that the rise in the RD signal is related to the As dimer annihilation caused by TMG decomposition, and As dimer formation. Our results also show that the growth amount under monolayer is proportional to the TMG molecular population in the TMG pulse.
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