Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry

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The range profiles of 1.0 MeV P+ implanted into silicon with a dose of 1×1015 cm−2 at angles of 7°, 45°, and 60° were measured by time-of-flight secondary ion mass spectrometry. The longitudinal and lateral range spreads at normal incidence were deduced from the measured profiles at oblique incidence. The measured profiles were systematically shallower and narrower than the TRIM’95(TRansport of Ions in Matter, 1995) predictions, but good agreement can be obtained if the electronic stopping power formula is slightly increased in the higher energy region during the calculations.