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Abstract
We describe computational methods and a new experimental technique for directly measuring the lateral spread of gate-induced surface inversion into the birdsbeak region of LOCOS (local oxidation of silicon) isolation. This method is of general use for characterizing all MOS structures with lateral variations in substrate doping, fixed charge, and/or oxide thickness. The procedure is applied to buried-channel CCDs to determine the location of generation sites along the channel-stop sidewalls.
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