Abstract
In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Al concentration were prepared by sol–gel method on glass substrates. The deposited films were annealed at different temperatures of 300, 350, 400, 450 and 500 °C for 1 h in air. X-ray diffraction (XRD) showed wurtzite crystalline structure for the films annealed above 400 °C. The films were subsequently irradiated by beams of excimer (KrF, λ = 248 nm) laser. The evolution of crystal structure, surface morphology and optical properties were studied using XRD, filed emission scanning electron microscope (FE-SEM) and UV–Vis spectrophotometer, respectively. Real-time measurement of electrical conductivity during laser irradiation showed a transient or persistent photoconductivity effect. The effect of laser energy on this photoconductivity was also investigated. Based on the observed photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), the observed photoconductivity effect was described.
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