Abstract
Based on the typical pixel structure and parameters of a polysilicon uncooled bolometer, the absorption rate of a polysilicon microbridge infrared detector for 10.6 µm laser energy was calculated through the optical admittance method, and the thermal coupling model of a polysilicon microbridge component irradiated by far infrared laser was established based on theoretical formulas. Then a numerical simulation study was carried out by means of finite element analysis for the actual working environment. It was found that the maximum temperature and maximum stress of the microbridge component are approximately exponentially changing with the laser power of the irradiation respectively and that they increase monotonically. The highest temperature zone of the model is gradually spread by the two corners of the bridge surface that are not connected to the bridge legs, and the maximum stress acts on both sides of the junction of the microbridge legs and the substrate. The mechanism of laser-induced hard damage to polysilicon detectors is the melting damage caused by high temperature. This paper lays the foundation for the subsequent study of the interference mechanism of the laser on working state polysilicon detectors.
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