Abstract
The laser-induced bulk breakdown in Ge, Si and GaAs crystals at the 10.6 µm, 2.76 µm, and 2.94 µm radiation wavelengths of the pulsed CO2, Ca2F:Er3+ and YAG:Er3+ lasers is investigated. Generation of free carriers has been observed and their kinetics studied by the dc and microwave photoconductivity measurement techniques. In Si and GaAs, the laser-induced bulk damage has been observed and the damage threshold measured. In Ge, the damage was not observed due to a self-defocusing effect associated with the negative contribution of nonequilibrium electrons in the refractive index. Mechanisms of free carrier generation and laser-induced damage are discussed.
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