Abstract
We have shown in a series of studies that irradiation of YBa 2Cu 3O 7− δ (YBCO) with ions of energy in the range of 30–350 keV through a suitable mask can be used to create highly localized damage regions in the films. This technique has been successfully employed to create high quality Josephson junctions in YBCO with an ion beam implanter capable of in situ low temperature electrical measurement during implantation and focussed ion beam nanolithography. The fabricated devices show a clear dc and ac Josephson effects. This technique is very promising in terms of simplicity and flexibility of fabrication and has potential for high density integration.
Published Version
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