Abstract
A two-dimensional analytical model of a metal-oxide-semiconductor field-effect transistor (MOSFET) has been developed to examine theoretically the effect of ionizing radiation on the characteristics of an ion-implanted MOSFET. The radiation-induced change in the flat-band voltage have been utilized to estimate the characteristics of the device in the post-irradiated condition. The model has been used in conjunction with the Level-2 models of the SPICE package for estimating the I D – V D characteristics of the MOSFET in the post-irradiated condition. The model has been validated by reported experimental results. The two-dimensional nature of the model enables it to characterize even short-channel MOSFETs in the pre- and post-irradiated conditions.
Published Version
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