A Comparative Study on Electrical Characteristics of Bulk, SOI, and DG MOSFET

Abstract

AbstractTransistors are the foundation for electronic circuits and are continuously modifying in design from their insertion into the semiconductor industry to follow Moore’s law. The scaling of conventional bulk metal oxide semiconductor field-effect transistors (MOSFETs) improves IC performance in driving capability and switching speed up to a specific limit. The limiting factors in the bulk MOSFET downscaling are power consumption due to short-channel effects (SCEs) like drain-induced barrier lowering, gate-induced drain leakage, Vth roll-off, leakage current, and subthreshold slope degradation. New device architectures like silicon on insulator MOSFET (SOI MOSFET), double-gate MOSFET (DG MOSFET) are emerged to continue the scaling trends which have low leakage and low threshold voltage without any degradation in the performance. In this paper, we make a comparative study on the electrical characteristics of the conventional planar MOSFET, SOI MOSFET, and DG MOSFET. We extract the electrical characteristics of the above structures by using the nanoHUB tool and show that for the same design parameters DG MOSFET exhibits large Ion current as well as low DIBL, and low subthreshold swing as compared with SOI and bulk MOSFET. From the graph obtained, the values of Ion, Ioff subthreshold slope are calculated, and it has been proved that due to the presence of two gates in DG MOSFET on either side of the channel, which makes the gate-to-channel coupling doubled resulting in the suppression of SCEs and higher Ion.KeywordsBulk MOSFETSOIShort-channel effectDrain-induced barrier loweringDouble-gate MOSFET