Calibration of a MOSFET Detection System for 6-MV In Vivo Dosimetry

Abstract

Purpose: Metal oxide semiconductor field-effect transistor (MOSFET) detectors were calibrated to perform in vivo dosimetry during 6-MV treatments, both in normal setup and total body irradiation (TBI) conditions. Methods and Materials: MOSFET water-equivalent depth, dependence of the calibration factors (CFs) on the field sizes, MOSFET orientation, bias supply, accumulated dose, incidence angle, temperature, and spoiler-skin distance in TBI setup were investigated. MOSFET reproducibility was verified. The correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was studied. MOSFET midplane dosimetry in TBI setup was compared with thermoluminescent dosimetry in an anthropomorphic phantom. By using ionization chamber measurements, the TBI midplane dosimetry was also verified in the presence of cork as a lung substitute. Results: The water-equivalent depth of the MOSFET is about 0.8 mm or 1.8 mm, depending on which sensor side faces the beam. The field size also affects this quantity; Monte Carlo simulations allow driving this behavior by changes in the contaminating electron mean energy. The CFs vary linearly as a function of the square field side, for fields ranging from 5 × 5 to 30 × 30 cm 2. In TBI setup, varying the spoiler-skin distance between 5 mm and 10 cm affects the CFs within 5%. The MOSFET reproducibility is about 3% (2 SD) for the doses normally delivered to the patients. The effect of the accumulated dose on the sensor response is negligible. For beam incidence ranging from 0° to 90°, the MOSFET response varies within 7%. No monotonic correlation between the sensor response and the temperature is apparent. Good correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was found (the correlation coefficient is about 1). The MOSFET midplane dosimetry relevant to the anthropomorphic phantom irradiation is in agreement with TLD dosimetry within 5%. Ionization chamber and MOSFET midplane dosimetry in inhomogeneous phantoms are in agreement within 2%. Conclusion: MOSFET characteristics are suitable for the in vivo dosimetry relevant to 6-MV treatments, both in normal and TBI setup. The TBI midplane dosimetry using MOSFETs is valid also in the presence of the lung, which is the most critical organ, and allows verifying that calculation of the lung attenuator thicknesses based only on the density is not correct. Our MOSFET dosimetry system can be used also to determine the surface dose by using the water-equivalent depth and extrapolation methods. This procedure depends on the field size used.