Abstract
The SIRAD facility at the 15 MV Tandem accelerator of the INFN Legnaro Laboratory is dedicated to characterizing the global sensitivity of electronic devices and systems to single event effects (SEE) due to ion impacts over a wide range of linear energy transfer. To map out device sensitivity with micrometric resolution, an ion electron emission microscope will be used to localize the impact point of each ion, with spatial resolution better than 1 μm, by imaging the secondary electrons emitted by the device. A fast position sensitive detector will handle rates >10 4 Hz. The system will be fully ion-impact reconstruction efficient for ions with Z⩾8.
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