Abstract
An axial ion electron emission microscope (IEEM) is now working at the SIRAD irradiation facility of the INFN Laboratories of Legnaro (Italy). The IEEM is used to precisely reconstruct the impact points of single ions, information that may be used to determine the areas of a microelectronic device under test that are sensitive to single event effects (SEE). After describing the setup briefly reviewing its working principles, we show our first time resolved ion induced electron emission images of standard calibration targets. We also discuss a preliminary measurement of ion impact detection efficiency of the IEEM system and the available trigger signals for SEE studies. We finally make an assessment of ion electron emission microscopy at SIRAD and indicate future developments.
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