Abstract
Silicon nitride stress capping layers are pivotal in the semiconductor industry for their role in enhancing electron mobility and driving currents in n-channel silicon MOSFETs. This research delves into the effects of silicon nitride-induced strain on the electronic properties of bilayer Molybdenum Disulfide (MoS2), a promising two-dimensional semiconductor. We first examine the modifications in the photoluminescence and Raman spectra of bare bilayer MoS2 under strain. By depositing a silicon nitride stress liner on a bilayer MoS2 field effect transistor (FET), which impacts both the gate and the source-drain regions, we replicate the stress conditions akin to those experienced in silicon MOSFETs. This methodical approach enables us to comprehensively study the evolution from back-gated to top-gated, and ultimately, to strain-gated FET configurations. Our findings indicate that tensile strain crucially modifies the electronic structure of MoS2, primarily reducing the indirect band gap by lowering the conduction band at the K point. Performance evaluations of the FETs demonstrate a marked increase in electron mobility and on-current in the strain-gated configurations compared to top-gated setups, highlighting the positive effects of tensile strain on carrier transport within MoS2. This study not only furthers our understanding of strain effects on MoS2 but also underscores the potential of strain engineering in optimizing semiconductor devices.
Published Version
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