Abstract
Herein, the impact of arsenolite oxide (As2O3) crystallites on the structural and optical properties of porous gallium arsenide (GaAs) is examined, focusing on understanding the potential passivation effect and its influence on material stability and safety. Utilizing a comprehensive set of analytical methods, including cathodoluminescence (CL) spectroscopy, Raman scattering spectroscopy, and X‐ray diffraction, the interaction between the GaAs substrate and arsenolite crystallites is characterized. The results indicate that the crystallites do not significantly alter the electronic and optical properties of the underlying GaAs, suggesting a possible passivating effect that could enhance device performance. However, concerns regarding arsenolite's environmental stability and toxicity prompt a cautious approach to its application. Herein, the need for further research into conditions conducive to natural oxide formation, exploration of alternative passivation strategies, and development of safe and stable oxide layers is underscored. Reproducible results are necessary to confirm the differences in CL signals between samples, as the current findings are based on single measurements.
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