Monte Carlo simulation of CL and EBIC contrasts for isolated dislocations

Abstract

AbstractElectron beam‐induced current (EBIC) and cathodoluminescence (CL) are widely used to investigate semiconductor materials and devices, particularly to obtain information on the recombination properties and the geometry of defects. This report describes a simple formulation of CL and EBIC contrasts based on the Born approximation of excess carrier density in the presence of a pointlike defect. Quantitative interpretation of the CL and EBIC images is often difficult because of a lack of accurate theory treating simultaneously both the details of the electron beam penetration in the semiconductor and the generation of EBIC and CL signals. To overcome this difficulty, the Monte Carlo approach to the phenomenon of the electron beam penetration in solids has been developed to calculate the CL and EBIC signals during a simulation of the electron trajectory. Results for an inclined dislocation in GaAs are presented.