Abstract
The internal inhomogeneities in resistivity, electro-mechanical coupling constant, and electron drift mobility in photoconducting CdS Acoustic Amplifier crystals are measured using an Optical Probe. The Probe consists of a laminar, amplitude-modulated beam of light projected through the crystal and superimposed on the normal illumination. The inhomogeneity information is carried as an a.c. component of the current or ultrasonic signal through the crystal. Results indicate marked inhomogeneities in all these parameters, and point strongly to the fact that the electron drift mobility variation is a primary cause of the resistivity variation in the sample.
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