Abstract
Lead oxide thin films were deposited on Ir/IrO 2 /SiO 2 /Si substrates by liquid delivery metalorganic chemical vapor deposition at 525 °C in order to understand its influence on Pb-based ferroelectric film growth. The Ir substrates were variously pretreated in situ to control the surface oxidation state. Fully oxidized lead oxide films were grown on a nonoxidized Ir or fully oxidized IrO 2 surface. The lead oxide film growth on partially oxidized IrO x (x < 2) was hampered resulting in metallic Pb incorporation which may largely degrade the electrical properties of the film. IrO x oxidizes quickly consuming the supplied oxygen.
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