Abstract
Lead oxide thin films were deposited on and substrates by liquid delivery metallorganic chemical vapor deposition (MOCVD) at substrate temperatures ranging from 475 to using a dome-type CVD chamber in order to understand the MOCVD behavior of ferroelectric films. The precursor and oxidant were bis-tetramethylheptanedionato- dissolved in ethylcyclohexane and , respectively. The lead oxide films were nicely grown on the electrode irrespective of the deposition temperature. However, the film growth on the electrode was hampered by the in situ oxidation of the film when the growth temperature was above . The film grown at contained metallic components which may largely degrade the electrical properties of the film. A smaller oxygen flow rate reduced the oxidation of the film and enhanced the lead oxide film growth with a smaller content of metallic . An interesting observation was that the reactively sputtered electrodes are reduced during the lead oxide CVD process and produced similar film growth behaviors as that on electrodes.
Published Version
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