Abstract
The influence of the layer structure on the leakage current through Schottky contacts on the heterosystem InAlAs/InGaAs is investigated with the help of a fast one-dimensional model. In the presented model the total leakage current is determined by the calculation of a tunneling component and a current caused by thermionic emission. The model includes the calculation of the sheet carrier concentration in the two-dimensional electron gas (2DEG) and the barrier lowering caused by the Schottky effect. The good agreement of simulated and measured currents in dependence on the applied voltage and the device temperature demonstrates the validity of the model. A detailed analysis of leakage current behaviour in dependence on the layer structure with regard to heterostructure FET (HFET) applications is presented in this paper.
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