Abstract
The grown-in defects in Czochlalski silicon with various growth-striation intervals are investigated using the optical precipitate profiler and compared with the distribution of interstitial oxygen concentrations [Oi]. The striation intervals do not influence the density or size of the grown-in defects. However, the defect size in the peak [Oi] region is the same as the size in the valley [Oi] region and the total defect volume in the peak is larger than the volume in the valley. It is suggested that the grown-in defects grow by gathering vacancies into some nuclei in the peak region.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call