Abstract
The relationship between flow pattern defects (FPDs), Secco etch pit defects (SEPDs), defects detected by IR light scattering tomography (LSTDs) and defects detected by an optical precipitate profiler (OPP-defects) was investigated in the same area of as-grown and annealed wafers. It was concluded that the relationship between grown-in defects in as-grown Czochralski silicon crystals is expressed as LSTDs=OPP-defects=FPDs+SEPDs. FPDs were decreased after annealing, but LSTDs were still observed at the positions where the LSTDs were detected in the as-grown state. It was found that the origins of FPDs are not annihilated during annealing.
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