Abstract
Grown-in defects detected by a bright-field infrared-laser interferometer (known as Optical Precipitate Profiler: OPP) in Czochralski silicon (Cz–Si) have been investigated by means of transmission electron microscopy (TEM). The grown-in defects in Cz–Si grown at the pulling rate of 1.0 mm/min are identified as twin or triple polyhedral cavities faced by {111} and {100} planes, with a total size of 0.1–0.2 µm. These polyhedral cavities were observed to be attached to each other. It has been found that the grown-in defects in growth-held Cz–Si at 1080°C for 120 min remarkably grow as twin or triple polyhedral cavities with a total size of 0.4–0.7 µm. Further, the quantitative relation between the size of the grown-in defects and the OPP signal intensity is derived.
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