Abstract
The Electron Beam Induced Current (EBIC) method using an aluminum Schottky barrier was applied to high-resistivity undoped CdTe crystals to obtain images of crystal defects. The defects such as cellular dislocation structures and twins were observed to produce distributions of dark spots in EBIC images. When the crystals were etched with PBr etchant, it was found that the etched patterns corresponded to high intensity regions in the EBIC images.
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