Abstract
It has been confirmed that the Electron Beam Induced Current (EBIC) technique is effective for the investigation of amorphous Si (a-Si) properties. Appling the EBIC method to an analysis of a-Si properties, it is possible to investigate the fine property distribution with two-dimensional information at a distinct local environment. EBIC images of a-Si films on various kinds of substrates were obtained with the limit of the resolution being about 0.5 μm. The fine property distribution indicated by the EBIC image corresponds well with the unevenness of the surface of a-Si films. Therefore, it has been possible to carry out a morphological study and a property investigation of a-Si films by the EBIC technique.
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