Abstract
AbstractIon beam-based techniques have contributed significantly towards the prerequisites of society. These techniques are proven to be vital in the synthesis of materials, device fabrication as well as the characterization of the materials. Apart from the synthesis and characterization of materials, the manipulation of the physical properties and device characteristics are other important aspects. Ion beam-based sputtering methods are being extensively used to grow thin films of different kinds of materials. Recently, the focused ion beam (FIB) technique is used to prepare samples for various experimental techniques like transmission electron microscopy, X-ray imaging, etc. This technique is being further extended to microsystem technology.Ion beam methods have shown the potential to utilize them for material synthesis. Silicon-based materials, graphene, nanowires, plasmonic nanostructures, and quantum dots are some of the examples. Additionally, by passing through the material, ion beam techniques play an important role in modifying the physical characteristics of the material. Ion beam irradiation and implantation are two common and well-known techniques that are proven to be assets for this purpose. These techniques have found immense importance in recent years especially in semiconductor-based electronics. This book briefly discusses the ion beam processes and the potential applications in oxide semiconductors.
Published Version
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