Formation, Dynamics, and Characterization of Nanostructures by Ion Beam Irradiation

Abstract

Ion beam irradiation is a potential tool for phase formation and material modification as a non-equilibrium technique. Localized rise in temperature and ultra fast (∼10−12 s) dissipations of impinging energy make it an attractive tool for metastable phase formation. As a matter of fact, a major component of materials science is dominated by ion beam methods, either for synthesis of materials or for its characterization. The synthesis of nanostructures, and their modification by ion beam technique will be discussed in this review article. Formation of nanostructures using ion beam technique will be discussed first. Depending on species (e.g., mass and charge state) and energy range, there are various modes for an energetic ion to dissipate its energy. The role of the electron will also be covered in this article as a basic principle of its interaction with matter, which is same as for an ion. By using a simple reactive ion beam or electron induced deposition, a secondary phase can be nucleated by ion beam mixing techniques, either by using inert gas irradiation or reactive gas implantation on any desired substrate. Nucleation of secondary phase can also be executed by electron irradiation and direct implantation of either negative or positive ions. Post implantation annealing processes are required for the complete growth of clusters formed in most of these ion irradiation techniques. Implantation processes being inherently a non-equilibrium technique, defects always have a role to play in phase formation, amorphization, and beyond (blister formation). When implanted with large energy, even electrons, one of the lightest charged particles, also manifest these properties. Electronic and nuclear energy losses of the impinging charged particle play a crucial role in material modification. Doping a nanocluster, however, is still a controversial topic. Some light will be shed on this topic with a discussion of focused ion beam.