Abstract
Maskless patterning of spin-on glass (SOG) by focused ion beam (FIB) irradiation was investigated. Silanol-type SOG and 100 keV Ga FIB were employed as SOG material and ion beam, respectively. Heat treatment up to 850°C was also performed for comparison with ion beam irradiation effect. The spectra of Fourier transform infrared (FTIR) transmission and X-ray photoelectron spectroscopy (XPS) for SOG material showed that the crosslinking reaction was induced in SOG by ion beam irradiation, which is almost the same behavior as that induced by the heat treatment. As a result, SOG can be used as a negative-type ion beam resist and patterned masklessly by FIB irradiation. The threshold dose for the exposure of SOG film using FIB was about 1.5 µC/cm2 and almost 2-3 orders of magnitude less than that for an electron beam (EB). A 0.15-µm line-and-space (L/S) pattern was delineated by 100 keV Ga FIB irradiation.
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