Abstract
The properties of spin-on glass (SOG) film modified by 100 keV Ga +, Ar +, N + and He + ion beam irradiation were investigated by Fourier transform infrared absorption spectroscopy and X-ray photoelectron spectroscopy. SOG becomes insoluble to methanol by the ion beam irradiation and can be used as negative resist for ion beam irradiation at doses ranging from 1×10 13 to 2×10 14 cm −2, depending on the ion mass. A cross-linking reaction in SOG material by ion beam irradiation is probably the main cause for this change of SOG, and it is found that both nuclear and electronic collisions in SOG film are responsible for this reaction.
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