Interface state density in Au- nGaAs Schottky diodes

Abstract

A method for determining the surface state density in Schottky diodes taking into account both I–V and C–V data while considering the presence of a deep donor level is presented. The model assumes that the barrier height is controlled by the energy distribution of surface states in equilibrium with the metal and the applied potential and does not include, explicitly, an interfacial layer. The model was applied to extract interface state densities of Au- nGaAs guarded Schottky diodes fabricated from bulk and VPE (100) GaAs with carrier conentrations between 3 × 10 15 and 8 × 10 16 cm −3. These diodes exhibited ideality ( n) factors of approximately 1.02 and room temperature saturation current densities ∼10 −8 A/cm 2. This model is in substantial agreement with forward bias measurements over the 77–360°K temperature range investigated, in that a temperature-independent energy distribution of interface states was obtained. In reverse bias the interface state model is most valid with the higher carrier concentration material and at high temperature and low bias voltage. Typical interface state densities from 0.07 eV above the zero bias Fermi level to 0.01 eV below the Fermi level were 2 × 10 13 cm −2 eV −1. The validity of the model under reverse bias is restricted by a non-thermionic reverse current, thought to be enhance field emission from traps.