Abstract
The energy distribution of interface states during NBTI stress of ultra-thin nitrided-oxide p-FETs is studied using a combination of LV-SILC and DCIV measurements. LV-SILC is sensitive to states near the conduction band edge:, while DCIV is sensitive to states near mid-gap. The results show that die interface states associated with NBTI in nitrided oxides have a very broad energy distribution, Compared to pure SiO/sub 2/, the interface state density in nitrided oxide is higher in the upper half of the Si band gap. In addition, generated bulk neutral traps show a poor agreement with the NBTI-induced threshold voltage shift.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
