Abstract
A method for determining the interface state density in Schottky diodes taking into account both I-V and C-V data while considering the presence of a deep donor level is presented. The model assumes that the barrier height is controlled by the energy distribution of interface states in equilibrium with the metal and the applied potential and does not include, explicitly, an interfacial layer. The model has been applied to extract interface state densities of Au and Al nGaAs guarded Schottky diodes fabricated from bulk and VPE
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